2n60b TRANSISTOR

10pcs SSP2N60B TO-220 SSP2N60 TO220 2N60B 2N60 TO-220. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

PRODUCT DETAILS: 2n60b TRANSISTOR

Item specifics: 2n60b TRANSISTOR

  • Brand Name: vanxy
  • Origin: CN(Origin)
  • Condition: New
  • Type: Other
  • Model Number: SSP2N60B
  • Application: Other
  • Operating Temperature:International standard
  • Supply Voltage:International standard
  • Dissipation Power: International standard
  • Package: Other
  • is_customized: Yes

Product Description: 2n60b TRANSISTOR

Part number : 2N60B, SSP2N60B, SSS2N60B, SSW2N60B, SSI2N60B

Functions : 600V N-Channel MOSFET

Package information : TO-220, D2-PAK, I2-PAK Type

Manufacturer : Fairchild

Features: 2n60b TRANSISTOR


• 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability, Typical Characteristics

Absolute Maximum Ratings: 2n60b

  1. VDSS Drain-Source Voltage 600 V
  2. ID Drain Current – Continuous (TC = 25°C) 2.0 A, – Continuous (TC = 100°C) 1.3 A
  3. IDM Drain Current – Pulsed (Note 1) 6.0 A
  4. VGSS Gate-Source Voltage ± 30 V
  5. EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
  6. IAR Avalanche Current (Note 1) 2.0 A
  7. EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
  8. dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
  9. PD Power Dissipation (TA = 25°C) * 3.13 W
  10. Power Dissipation (TC = 25°C) 54 W – Derate above 25°C 0.43 W/°C

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