Details 74lv1t34 Chipset IC
Available in the Ultra Small 0.64-mm2 74lv1t34
Package (DPW) With 0.5-mm Pitch
• Supports 5-V VCC Operation
• Input and Open-Drain Output Accept
Voltages up to 5.5 V
• Can Translate Up or Down
• Max tpd of 4.2 ns at 3.3 V
• Low Power Consumption, 10-µA Max ICC
• ±24-mA Output Drive at 3.3 V
• Ioff Supports Live Insertion, Partial-Power-Down
Mode, and Back-Drive Protection
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
This single buffer/driver is designed for 1.65-V to
5.5-V VCC operation. The output of the SN74LVC1G07 device is open drain and can be connected to other open-drain outputs to
implement active-low wired-OR or active-high wiredAND functions. The maximum sink current is 32 mA.
The SN74LVC1G07 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
The 74lv1t34 device contains one open-drain buffer with a maximum sink current of 32 mA. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
The DPW package technology is a major breakthrough in IC packaging. The DPW 0.64 mm square footprint saves significant board space over other package options while still retaining the traditional manufacturing friendly lead pitch of 0.5 mm.
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality
The SN74LVC1G07 is a high drive CMOS device that can be used to implement a high output drive buffer, such as an LED application. It can sink 32 mA of current at 4.5 V making it ideal for high drive and wired-OR/AND functions. It is good for high speed applications up to 100 MHz. The inputs are 5.5 V tolerant allowing it to translate up/down to VCC
This device uses CMOS technology and has balanced output drive. Care should be taken to avoid bus contention because it may drive currents that would exceed maximum limits. The high drive will also create fast edges into light loads so routing and load conditions should be considered to prevent ringing
The power supply can be any voltage between the min and max supply voltage rating located in the Recommended Operating Conditions table. Each Vcc pin should have a good bypass capacitor to prevent power disturbance. A 0.1-μF capacitor is
recommended for devices with a single supply.
If there are multiple Vcc pins then a 0.01-μF or 0.022-μF capacitor is recommended for each power pin. It is acceptable to parallel multiple bypass caps to reject different frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor should be
installed as close to the power pin as possible for best results.
When using multiple bit logic devices inputs should not ever float. In many cases, functions or parts of functions of digital logic devices are unused; for example, when only two inputs of a triple-input AND gate are used or only 3 of the 4 buffer gates are used. Such input pins should not be left unconnected because the undefined voltages at the outside connections result in undefined operational states. Specified below are the rules that must be
observed under all circumstances.
All unused inputs of digital logic devices must be connected to a high or low bias to prevent them from floating. The logic level that should be applied to any particular unused input depends on the function of the device. Generally, they will be tied to Gnd or Vcc, whichever is more convenient.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Important Information and Disclaimer:The information provided on this page represents TI’s knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information.
74lv1t34 are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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